vishay general semiconductor smb10(8)j5.0(c) thru smb10(8)j40(c)a document number 88422 12-sep-06 www.vishay.com 1 high power density surface mount t rans z orb ? transient voltage suppressors features ? low profile package ? ideal for automated placement ? glass passivated chip junction ? available in unidirectional and bidirectional ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-std-020c, lf max peak of 260 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-214aa (smbj) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: for unidirectional types the color band denotes cathode end, no marking on bidirectional types do-214aa (smb) major ratings and characteristics v wm 5.0 v to 40 v p ppm (unidirectional) 1000 w p ppm (bidirectional) 800 w i fsm (unidirectional only) 100 a t j max. 150 c note: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power diss ipation with a 10/1000 s waveform (1,2) (see fig. 1) unidirectional bidirectional p ppm 1000 800 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a peak forward surge current 8.3 ms si ngle half sine-wave uni-directional only (2) i fsm 100 a operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com 2 document number 88422 12-sep-06 vishay general semiconductor smb10(8)j5.0(c) thru smb10(8)j40(c)a unidirectional note: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 (4) v f = 3.5 v at i f = 50 a (uni-directional only) electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v (br) at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) min max smb10j5.0 1ad 6.40 7.82 10 5.0 1000 104.2 9.6 smb10j5.0a 1ae 6.40 7.07 10 5.0 1000 108.7 9.2 smb10j6.0 1af 6.67 8.15 10 6.0 1000 87.7 11.4 smb10j6.0a 1ag 6.67 7.37 10 6.0 1000 97.1 10.3 smb10j6.5 1ah 7.22 8.82 10 6.5 500 81.3 12.3 smb10j6.5a 1ak 7.22 7.98 10 6.5 500 89.3 11.2 smb10j7.0 1al 7.78 9.51 10 7.0 200 75.2 13.3 smb10j7.0a 1am 7.78 8.60 10 7.0 200 83.3 12.0 smb10j7.5 1an 8.33 10.2 1.0 7.5 100 69.9 14.3 smb10j7.5a 1ap 8.33 9.21 1.0 7.5 100 77.5 12.9 smb10j8.0 1aq 8.89 10.9 1.0 8.0 50 66.7 15.0 smb10j8.0a 1ar 8.89 9.83 1.0 8.0 50 73.5 13.6 smb10j8.5 1as 9.44 11.5 1.0 8.5 20 62.9 15.9 smb10j8.5a 1at 9.44 10.4 1.0 8.5 20 69.4 14.4 smb10j9.0 1au 10.0 12.2 1.0 9.0 10 59.2 16.9 smb10j9.0a 1av 10.0 11.1 1.0 9.0 10 64.9 15.4 smb10j10 1aw 11.1 13.6 1.0 10 5.0 53.2 18.8 smb10j10a 1ax 11.1 12.3 1.0 10 5.0 58.8 17.0 smb10j11 1ay 12.2 14.9 1.0 11 5.0 49.8 20.1 smb10j11a 1az 12.2 13.5 1.0 11 5.0 54.9 18.2 smb10j12 1bd 13.3 16.3 1.0 12 5.0 45.5 22.0 smb10j12a 1be 13.3 14.7 1.0 12 5.0 50.3 19.9 smb10j13 1bf 14.4 17.6 1.0 13 1.0 42.0 23.8 smb10j13a 1bg 14.4 15.9 1.0 13 1.0 46.5 21.5 smb10j14 1bh 15.6 19.1 1.0 14 1.0 38.8 25.8 smb10j14a 1bk 15.6 17.2 1.0 14 1.0 43.1 23.2 smb10j15 1bl 16.7 20.4 1.0 15 1.0 37.2 26.9 smb10j15a 1bm 16.7 18.5 1.0 15 1.0 41.0 24.4 smb10j16 1bn 17.8 21.8 1.0 16 1.0 34.7 28.8 smb10j16a 1bp 17.8 19.7 1.0 16 1.0 38.5 26.0 smb10j17 1bq 18.9 23.1 1.0 17 1.0 32.8 30.5 smb10j17a 1br 18.9 20.9 1.0 17 1.0 36.2 27.6 smb10j18 1bs 20.0 24.4 1.0 18 1.0 31.1 32.2 smb10j18a 1bt 20.0 22.1 1.0 18 1.0 34.2 29.2 smb10j20 1bu 22.2 27.1 1.0 20 1.0 27.9 35.8 smb10j20a 1bv 22.2 24.5 1.0 20 1.0 30.9 32.4 smb10j22 1bw 24.4 29.8 1.0 22 1.0 25.4 39.4 smb10j22a 1bx 24.4 26.9 1.0 22 1.0 28.2 35.5 smb10j24 1by 26.7 32.6 1.0 24 1.0 23.3 43.0 smb10j24a 1bz 26.7 29.5 1.0 24 1.0 25.7 38.9 smb10j26 1cd 28.9 35.3 1.0 26 1.0 21.5 46.6 smb10j26a 1ce 28.9 31.9 1.0 26 1.0 23.8 42.1 smb10j28 1cf 31.1 38.0 1.0 28 1.0 20.0 50.0 smb10j28a 1cg 31.1 34.4 1.0 28 1.0 22.0 45.4 smb10j30 1ch 33.3 40.7 1.0 30 1.0 18.7 53.5 smb10j30a 1ck 33.3 36.8 1.0 30 1.0 20.7 48.4 smb10j33 1cl 36.7 44.9 1.0 33 1.0 16.9 59.0 smb10j33a 1cm 36.7 40.6 1.0 33 1.0 18.8 53.3 smb10j36 1cn 40.0 48.9 1.0 36 1.0 15.6 64.3 smb10j36a 1cp 40.0 44.2 1.0 36 1.0 17.2 58.1 smb10j40 1cq 44.4 54.3 1.0 40 1.0 14.0 71.4 smb10j40a 1cr 44.4 49.1 1.0 40 1.0 15.5 64.5
document number 88422 12-sep-06 www.vishay.com 3 smb10(8)j5.0(c) thru smb10(8)j40(c)a vishay general semiconductor bidirectional note: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v (br) (1) (v) test current at i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) min max smb8j5.0c 1ad 6.40 7.82 10 5.0 2000 83.3 9.6 smb8j5.0ca 1ae 6.40 7.25 10 5.0 2000 87.0 9.2 smb8j6.0c 1af 6.67 8.15 10 6.0 2000 70.2 11.4 smb8j6.0ca 1ag 6.67 7.37 10 6.0 2000 77.7 10.3 smb8j6.5c 1ah 7.22 8.82 10 6.5 1000 65.0 12.3 smb8j6.5ca 1ak 7.22 7.98 10 6.5 1000 71.4 11.2 smb8j7.0c 1al 7.78 9.51 10 7.0 400 60.2 13.3 smb8j7.0ca 1am 7.78 8.60 10 7.0 400 66.7 12.0 smb8j7.5c 1an 8.33 10.2 1.0 7.5 200 55.9 14.3 smb8j7.5ca 1ap 8.33 9.21 1.0 7.5 200 62.0 12.9 smb8j8.0c 1aq 8.89 10.9 1.0 8.0 100 53.3 15.0 smb8j8.0ca 1ar 8.89 9.83 1.0 8.0 100 58.8 13.6 smb8j8.5c 1as 9.44 11.5 1.0 8.5 40 50.3 15.9 smb8j8.5ca 1at 9.44 10.4 1.0 8.5 40 55.6 14.4 smb8j9.0c 1au 10.0 12.2 1.0 9.0 20 47.3 16.9 smb8j9.0ca 1av 10.0 11.1 1.0 9.0 20 51.9 15.4 smb8j10c 1aw 11.1 13.6 1.0 10 10 42.6 18.8 smb8j10ca 1ax 11.1 12.3 1.0 10 10 47.1 17.0 smb8j11c 1ay 12.2 14.9 1.0 11 5.0 39.8 20.1 smb8j11ca 1az 12.2 13.5 1.0 11 5.0 44.0 18.2 smb8j12c 1bd 13.3 16.3 1.0 12 5.0 36.4 22.0 smb8j12ca 1be 13.3 14.7 1.0 12 5.0 40.2 19.9 smb8j13c 1bf 14.4 17.6 1.0 13 1.0 33.6 23.8 smb8j13ca 1bg 14.4 15.9 1.0 13 1.0 37.2 21.5 smb8j14c 1bh 15.6 19.1 1.0 14 1.0 31.0 25.8 smb8j14ca 1bk 15.6 17.2 1.0 14 1.0 34.5 23.2 smb8j15c 1bl 16.7 20.4 1.0 15 1.0 29.7 26.9 smb8j15ca 1bm 16.7 18.5 1.0 15 1.0 32.8 24.4 smb8j16c 1bn 17.8 21.8 1.0 16 1.0 27.8 28.8 smb8j16ca 1bp 17.8 19.7 1.0 16 1.0 30.8 26.0 smb8j17c 1bq 18.9 23.1 1.0 17 1.0 26.2 30.5 smb8j17ca 1br 18.9 20.9 1.0 17 1.0 29.0 27.6 smb8j18c 1bs 20.0 24.4 1.0 18 1.0 24.8 32.2 smb8j18ca 1bt 20.0 22.1 1.0 18 1.0 27.4 29.2 smb8j20c 1bu 22.2 27.1 1.0 20 1.0 22.3 35.8 smb8j20ca 1bv 22.2 24.5 1.0 20 1.0 24.7 32.4 smb8j22c 1bw 24.4 29.8 1.0 22 1.0 20.3 39.4 smb8j22ca 1bx 24.4 26.9 1.0 22 1.0 22.5 35.5 smb8j24c 1by 26.7 32.6 1.0 24 1.0 18.6 43.0 smb8j24ca 1bz 26.7 29.5 1.0 24 1.0 20.6 38.9 smb8j26c 1cd 28.9 35.3 1.0 26 1.0 17.2 46.6 smb8j26ca 1ce 28.9 31.9 1.0 26 1.0 19.0 42.1 smb8j28c 1cf 31.1 38.0 1.0 28 1.0 16.0 50.0 smb8j28ca 1cg 31.1 34.4 1.0 28 1.0 17.6 45.4 smb8j30c 1ch 33.3 40.7 1.0 30 1.0 15.0 53.5 smb8j30ca 1ck 33.3 36.8 1.0 30 1.0 16.5 48.4 smb8j33c 1cl 36.7 44.9 1.0 33 1.0 13.6 59.0 smb8j33ca 1cm 36.7 40.6 1.0 33 1.0 15.0 53.3 smb8j36c 1cn 40.0 48.9 1.0 36 1.0 12.4 64.3 smb8j36ca 1cp 40.0 44.2 1.0 36 1.0 13.8 58.1 smb8j40c 1cq 44.4 54.3 1.0 40 1.0 11.2 71.4 smb8j40ca 1cr 44.4 49.1 1.0 40 1.0 12.4 64.5
www.vishay.com 4 document number 88422 12-sep-06 vishay general semiconductor smb10(8)j5.0(c) thru smb10(8)j40(c)a note: (1) mounted on minimum recommended pad layout ratings and characteristics curves (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to ambient (1) r ja 72 c/w typical thermal resistance, junction to lead r jl 20 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode smb10j5.0a-e3/52 0.106 52 750 7" diameter plastic tape & reel smb10j5.0a-e3/5b 0.106 5b 3200 13" diameter plastic tape & reel figure 1. peak pulse power rating curve figure 2. pulse power or current versus initial junction temperature smb 8 j5.0c - smb 8 j40ca smb10j5.0 - smb10j40a 0.1 1 10 100 0.2 x 0.2" (0.5 x 0.5 mm) copper pad areas 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms p ppm - peak p u lse po w er (k w ) td - p u lse w idth (s) 0 255075100 100 75 50 25 0 125 150 175 200 t j - initial temperat u re (c) peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage, % figure 3. pulse waveform figure 4. typical junction capacitance 0 50 100 1 5 0 td 0 1.0 2.0 3.0 4.0 tr = 10 sec peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 sec w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (td) is defined as the point w here the peak c u rrent decays to 50 % of i ppm i ppm - peak p u lse c u rrent, % i rsm t - time ( ms ) 10 100 1000 10000 10 1 uni-directional bi-directional 100 200 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias v r , meas u red at stand-off v oltage v w m c j , j u nction capacitance (pf) v w m - re v erse stand-off v oltage ( v )
vishay general semiconductor smb10(8)j5.0(c) thru smb10(8)j40(c)a document number 88422 12-sep-06 www.vishay.com 5 package outline dimensions in inches (millimeters) figure 5. typical transient thermal impedance 1.0 10 100 0.01 0.1 10 1 100 1000 tp - p u lse d u ration (sec.) transient thermal impedance (c/ w ) figure 6. maximum non-repetitive forward surge current 10 200 100 100 1 10 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 8 .3 ms single half sine- w a v e undirectional only 0.160 (4.06) 0.1 8 0 (4.57) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.205 (5.21) 0.220 (5.59) 0 (0) 0.00 8 (0.2) 0.130 (3.30) 0.155 (3.94) 0.0 8 4 (2.13) 0.096 (2.44) 0.077 (1.95) 0.0 8 6 (2.20) cathode band do-214aa (smb) 0.0 8 5 max. (2.159 max.) 0.220 ref 0.0 8 6 mi n . (2.1 8 mi n .) 0.060 mi n . (1.52 mi n .) mountin g pad layout
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
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